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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP140 DESCRIPTION *High DC Current Gain: hFE = 1000(Min)@ IC= 5A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min) *Complement to Type TIP145 APPLICATIONS *Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 60 60 5 10 15 0.5 125 150 -65~150 UNIT V V V A A A W PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance,Junction to Ambient MAX 1.0 35.7 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff current Collector Cutoff current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 30mA, IB= 0 IC= 5A ,IB= 10mA IC= 10A ,IB= 40mA IC= 10A ,IB= 40mA IC= 10A ; VCE= 4V VCB= 60V, IE= 0 VCE= 30V, IB= 0 VEB= 5V; IC= 0 IC= 5A ; VCE= 4V IC= 10A ; VCE= 4V 1000 500 MIN 60 TYP. TIP140 MAX UNIT V 2.0 3.0 3.5 3.0 1 2 2 V V V V mA mA mA Switching Times td tr tstg tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, IC = 5.0 A, IB = 20 mA; Duty Cycle20% IB1 = IB2, RC & RB Varied, TJ = 25 B 0.15 0.55 2.5 2.5 s s s s isc Websitewww.iscsemi.cn |
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